首页> 外国专利> Series-connected SiC MOSFET drive circuit based on multi-winding transformer coupling

Series-connected SiC MOSFET drive circuit based on multi-winding transformer coupling

机译:基于多绕组变压器耦合的串联SiC MOSFET驱动电路

摘要

The present disclosure provides a series-connected SiC MOSFET drive circuit based on multi-winding transformer coupling. The drive circuit is mainly composed of a transformer, an energy storage capacitor and a push-pull circuit. The transformer plays a role of constraining a relationship between gate-source voltages of series-connected SiC MOSFETs to ensure that a drive voltage of each SiC MOSET in series is synchronously increased and decreased, and to prevent the problem of a dynamic voltage imbalance at moments of conduction and cutoff due to the desynchrony of the drive voltages. Both the energy storage capacitor and the push-pull structure are used to ensure that the SiC MOSFETs have sufficient drive currents at the moment of conduction to achieve fast conduction of the SiC MOSFETs. Meanwhile, a discharge loop is constructed for the gate-source voltages at the moment of cutoff to ensure that the drive voltages drop in a short period of time.
机译:本公开提供了基于多绕组变压器耦合的串联连接的SiC MOSFET驱动电路。驱动电路主要由变压器,储能电容器和推挽电路组成。变压器的作用是限制串联连接的SiC MOSFET的栅极-源极电压之间的关系,以确保同步增加和降低每个串联的SiC MOSET的驱动电压,并防止瞬间出现动态电压不平衡的问题由于驱动电压的失步而导通和截止。储能电容器和推挽结构都用于确保SiC MOSFET在导通时具有足够的驱动电流,以实现SiC MOSFET的快速导通。同时,在截止时为栅极-源极电压构建了一个放电环路,以确保驱动电压在短时间内下降。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号