首页> 外国专利> Highly oriented humic acid films and highly conducting graphitic films derived therefrom and devices containing same

Highly oriented humic acid films and highly conducting graphitic films derived therefrom and devices containing same

机译:高度取向的腐殖酸薄膜和由其衍生的高导电石墨薄膜以及包含该薄膜的装置

摘要

A highly oriented humic acid film, comprising multiple humic acid (HA) or chemically functionalized humic acid (CHA) sheets that are chemically bonded or merged and are substantially parallel to one another, wherein the film has a thickness from 5 nm to 500 μm, a physical density no less than 1.3 g/cm3, hexagonal carbon planes with an inter-planar spacing d002 of 0.4 nm to 1.3 nm as determined by X-ray diffraction, and a non-carbon element content or oxygen content lower than 5% by weight.
机译:一种高度取向的腐殖酸薄膜,包括多个腐殖酸(HA)或化学官能化的腐殖酸(CHA)片材,它们彼此化学键合或合并,并且彼此基本平行,其中该膜的厚度为5 nm至500μm, X射线衍射确定的物理密度不小于1.3 g / cm 3 的六边形碳平面,其平面间距d 002 为0.4 nm至1.3 nm以及非碳元素含量或氧含量低于5%(重量)。

著录项

  • 公开/公告号US10731931B2

    专利类型

  • 公开/公告日2020-08-04

    原文格式PDF

  • 申请/专利权人 NANOTEK INSTRUMENTS INC.;

    申请/专利号US201615240537

  • 发明设计人 ARUNA ZHAMU;BOR JANG;

    申请日2016-08-18

  • 分类号B32B9;F28F21/02;C09K5/14;C07D413/14;C01B32/20;B82Y30;

  • 国家 US

  • 入库时间 2022-08-21 11:27:20

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