Growth and analysis of highly oriented (11n) BCSCO films for device research

摘要

Films of BCSCO superconductor of the type Bi2CaSr2Cu2Ox have been grown by liquid phase epitaxy method (LPE), using a partially closed growth chamber. The films were grown on (001) and (110) NdGaO3 substrates by slow cooling process in an optimized temperature range below the peritectic melting point (880 C) of Bi2CaSr2Cu2O8. Optimization of parameters, such as seed rotation, soak of initial growth temperature and growth period results in the formation of 2122 phase BCSCO films. The films grown at rotation rates of less than 30 and more than 70 rpm are observed to be associated with the second phase of Sr-Ca-Cu-O system. Higher growth temperatures (is greater than 860 C) also encourage to the formation of this phase. X-Ray Diffraction (XRD) measurements show that the films grown on (110) NdGaO3 have a preferred (11 n)-orientation. It is pertinent to mention here that in our earlier results published elsewhere we obtained c-axis oriented Bi2CaSr2Cu2O8 phase films on (001) NdGaO3 substrate. Critical current density is found to be higher for the films grown on (110) than (001) NdGaO3 substrate orientation. The best values of zero resistance (T(sub co)) and critical current density obtained are 87 K and 105 A/sq cm, respectively.