Semiconductor light receiving device having a typeamp;#x2014;II superlattice

摘要

A light receiving device includes a light absorbing layer. The light absorbing layer includes multiple unit structures. Each unit structure has an InAs portion, a first GaSb portion, an InSb portion, and a second GaSb portion, which are arranged in a direction of an axis. One of the group-III atomic plane and the group-V atomic plane in the first GaSb portion is bonded to another of the group-III atomic plane and the group-V atomic plane in the InAs portion. One of the group-III atomic plane and the group-V atomic plane of the InSb portion is bonded to another of the group-III atomic plane and the group-V atomic plane of the first GaSb portion. One of the group-III atomic plane and the group-V atomic plane of the second GaSb portion is bonded to another of the group-III atomic plane and the group-V atomic plane of the InSb portion.