首页> 外国专利> Flash storage failure rate reduction and hyperscale infrastructure robustness enhancement through the MRAM-NOR flash based cache architecture

Flash storage failure rate reduction and hyperscale infrastructure robustness enhancement through the MRAM-NOR flash based cache architecture

机译:通过基于MRAM-NOR闪存的缓存体系结构来降低闪存故障率并提高超大规模基础架构的健壮性

摘要

Embodiments of the present invention provide flash-based storage with non-volatile memory components. MRAM is mainly used as a data buffer, and NOR flash is used to store metadata, such as FTL information, thereby providing non-volatile storage and significantly simplifying power failure mitigation. MRAM and NOR are jointly used to share the work performed by DRAM in existing SSDs based on the characteristics of the data stored, reducing the power consumption and cost of the SSD. The cache fault rate is reduced because both MRAM and NOR are immune from soft errors. Moreover, the working mechanisms are simplified and the power-up duration is significantly reduced because less data is copied from NAND flash, as there is no need to move all of the FTL information back to NAND flash at power off.
机译:本发明的实施例提供具有非易失性存储器组件的基于闪存的存储。 MRAM主要用作数据缓冲区,NOR闪存用于存储元数据(例如FTL信息),从而提供非易失性存储并显着简化了电源故障的缓解。基于存储数据的特性,MRAM和NOR共同用于共享DRAM在现有SSD中执行的工作,从而降低了SSD的功耗和成本。由于MRAM和NOR均不受软错误的影响,因此降低了缓存故障率。此外,由于不需要从断电时将所有FTL信息移回NAND闪存,因此从NAND闪存复制的数据较少,因此简化了工作机制并大大缩短了上电时间。

著录项

  • 公开/公告号US10489313B2

    专利类型

  • 公开/公告日2019-11-26

    原文格式PDF

  • 申请/专利权人 ALIBABA GROUP HOLDING LIMITED;

    申请/专利号US201615338897

  • 发明设计人 SHU LI;

    申请日2016-10-31

  • 分类号G06F3/16;G06F12/0866;G06F12/02;G06F3/06;G06F13/40;G06F13/42;G06F12/0895;G06F13/16;

  • 国家 US

  • 入库时间 2022-08-21 11:27:02

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