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Non-volatile memory system with reliability enhancement mechanism and method of manufacture thereof
Non-volatile memory system with reliability enhancement mechanism and method of manufacture thereof
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机译:具有可靠性增强机制的非易失性存储系统及其制造方法
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摘要
A method of manufacture of a non-volatile memory system comprising: forming a dielectric layer having a hole; depositing a first electrode in the hole of the dielectric layer; applying an ion source layer over the first electrode; and depositing a second electrode over the ion source layer including: depositing an interface layer on the ion source layer, and applying a cap layer on the interface layer.
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