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Super junction MOS bipolar transistor having drain gaps
Super junction MOS bipolar transistor having drain gaps
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机译:具有漏极间隙的超结MOS双极晶体管
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摘要
Methods and designs are provided for a vertical power semiconductor switch having an IGBT-with-built-in-diode bottom-side structure combined with a SJMOS topside structure in such a way as to provide fast switching with low switching losses (MOSFET), low on-resistance at low currents (SJMOS), low on-resistance at high currents (IGBT), and high current-density capability (IGBT).
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