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Three-dimensional memory device having zigzag slit structures and method for forming the same
Three-dimensional memory device having zigzag slit structures and method for forming the same
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机译:具有之字形缝隙结构的三维存储器件及其形成方法
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摘要
Embodiments of 3D memory devices having zigzag slit structures and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a memory stack including interleaved conductive layers and dielectric layers above the substrate, an array of memory strings each extending vertically through the memory stack, and a plurality of slit structures laterally dividing the array of memory strings into a plurality of memory regions. Each of the plurality of slit structures extends vertically through the memory stack and extends laterally in a first zigzag pattern in a plan view.
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