3D memory device having zigzag slit structure and method for forming same

摘要

An embodiment of a 3D memory device having a zigzag slit structure and a method of forming the same is disclosed. In an example, the 3D memory device is a substrate, a memory stack including a conductive layer and a dielectric layer interleaved on the substrate, a memory string array extending vertically through the memory stack, and a memory string array laterally divided into a plurality of memory regions. It includes a plurality of slit structures. Each of the plurality of slit structures vertically extends through the memory stack and laterally extends in a first zigzag pattern in the plan view.