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Differential capacitive MEMS pressure sensor and manufacturing method thereof

机译:差分电容MEMS压力传感器及其制造方法

摘要

The present invention discloses a differential capacitive MEMS pressure sensor and a manufacturing method thereof. The MEMS pressure sensor includes a sensitive structural layer, which includes a common sensitive part and a common supporting part located on the edge of the common sensitive part, a thickness of the common supporting part being larger than that of the common sensitive part; and the MEMS pressure sensor also includes an upper fixed electrode structural layer and a lower fixed electrode structural layer which are vertically symmetric relative to the sensitive structural layer and used for forming differential capacitors with the common sensitive part. According to the MEMS pressure sensor of the present invention, by the differential capacitor structures, inhibition of chips on common-mode signals is enhanced, and a signal to noise ratio of output signals is improved. Meanwhile, the thickness of the common supporting part of the present invention is larger than that of the common sensitive part, such that the peripheral common supporting part can shield strains caused by temperatures and stresses. Therefore, the strains transmitted to the common sensitive part because of temperature and stress changes are greatly reduced, and temperature stability and stress stability of the chips are improved.
机译:本发明公开了一种差动电容式MEMS压力传感器及其制造方法。所述MEMS压力传感器包括敏感结构层,所述敏感结构层包括公共敏感部分和位于所述公共敏感部分的边缘上的公共支撑部分,所述公共支撑部分的厚度大于所述公共敏感部分的厚度。所述MEMS压力传感器还包括上固定电极结构层和下固定电极结构层,所述上固定电极结构层和下固定电极结构层相对于所述敏感结构层垂直对称,并用于与所述公共敏感部分形成差分电容器。根据本发明的MEMS压力传感器,通过差分电容器结构,增强了芯片对共模信号的抑制,并且改善了输出信号的信噪比。同时,本发明的公共支撑部分的厚度大于公共敏感部分的厚度,使得外围的公共支撑部分可以屏蔽由温度和应力引起的应变。因此,由于温度和应力变化而传递到公共敏感部分的应变被大大减小,并且芯片的温度稳定性和应力稳定性得到改善。

著录项

  • 公开/公告号US10495535B2

    专利类型

  • 公开/公告日2019-12-03

    原文格式PDF

  • 申请/专利权人 GOERTEK.INC;

    申请/专利号US201515559331

  • 发明设计人 GUOGUANG ZHENG;

    申请日2015-12-10

  • 分类号G01L9/12;B81B7/02;

  • 国家 US

  • 入库时间 2022-08-21 11:25:42

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