METHOD FOR FABRICATING A FERROELECTRIC MEMORY AND METHOD FOR CO-FABRICATION OF A FERROELECTRIC MEMORY AND OF A RESISTIVE MEMORY

摘要

A method of fabrication of a ferroelectric memory including a first electrode, a second electrode and a layer of active material made of hafnium dioxide HfO₂ positioned between the first electrode and the second electrode, where the method includes depositing a first electrode layer; depositing the layer of active material; doping the layer of active material; depositing a second electrode layer; wherein the method includes sub-microsecond laser annealing of the layer of doped active material.