首页> 外国专利> Vector-by-matrix multiplier modules based on non-volatile 2D and 3D memory arrays

Vector-by-matrix multiplier modules based on non-volatile 2D and 3D memory arrays

机译:基于非易失性2D和3D存储器阵列的向量乘矩阵乘法器模块

摘要

Systems and methods for a vector-by-matrix multiplier (VMM) module having a three-dimensional memory matrix of nonvolatile memory devices each having a charge storage, an activation input, a signal input and an output signal in a range that is based on a stored charge and an input signal during assertion of the activation signal. The memory devices are arranged in two dimensional (XY) layers that are vertically disposed along (Z) columns. The activation inputs of each layer are connected to a same activation signal, the memory devices of rows in a first dimension (X) of each layer have signal inputs connected to different input signals and have signal outputs connected in series to a common output. The memory devices of rows in a second dimension (Y) of each layer have signal inputs connected to a set of the same inputs along the first dimension.
机译:用于具有非易失性存储器件的三维存储矩阵的矢量乘矩阵乘数(VMM)模块的系统和方法,每个非易失性存储器件在以下范围内具有电荷存储,激活输入,信号输入和输出信号:在激活信号有效期间存储的电荷和输入信号。存储器件布置在沿(Z)列垂直放置的二维(XY)层中。每层的激活输入连接到相同的激活信号,每层的第一维度(X)中的行的存储设备具有连接到不同输入信号的信号输入,并且具有串联连接到公共输出的信号输出。每一层的第二维(Y)中的行的存储器件具有沿第一维连接到一组相同输入的信号输入。

著录项

  • 公开/公告号US10552510B2

    专利类型

  • 公开/公告日2020-02-04

    原文格式PDF

  • 申请/专利权人 MENTIUM TECHNOLOGIES INC.;

    申请/专利号US201916246353

  • 发明设计人 FARNOOD MERRIKH BAYAT;MIRKO PREZIOSO;

    申请日2019-01-11

  • 分类号G06F17/16;G11C16/04;G06N3/04;G11C16/10;G06N3/08;G11C16/26;G11C7/10;G11C11/54;

  • 国家 US

  • 入库时间 2022-08-21 11:24:58

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