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Complimentary Metal-Oxide-Semiconductor (CMOS) with Low Contact Resistivity and Method of Forming Same
Complimentary Metal-Oxide-Semiconductor (CMOS) with Low Contact Resistivity and Method of Forming Same
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机译:低接触电阻率的互补金属氧化物半导体(CMOS)及其形成方法
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摘要
An embodiment complimentary metal-oxide-semiconductor (CMOS) device and an embodiment method of forming the same are provided. The embodiment CMOS device includes an n-type metal-oxide-semiconductor (NMOS) having a titanium-containing layer interposed between a first metal contact and an NMOS source and a second metal contact and an NMOS drain and a p-type metal-oxide-semiconductor (PMOS) having a PMOS source and a PMOS drain, the PMOS source having a first titanium-containing region facing a third metal contact, the PMOS drain including a second titanium-containing region facing a fourth metal contact.
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