FULLY DEPLETED SEMICONDUCTOR-ON-INSULATOR TRANSISTORS WITH DIFFERENT BURIED DIELECTRIC LAYER CHARGES AND DIFFERENT THRESHOLD VOLTAGES

摘要

According to embodiments of the present invention, a semiconductor device includes a first transistor located on a first fixed charge dielectric layer and a second transistor located on a second fixed charge dielectric layer. The first fixed charge dielectric layer and the second fixed charge dielectric layer are differently charged such that the first transistor and the second transistor have different threshold voltages.