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Vertical stack transistor, a display device including the vertical stack transistor, and a manufacturing method of the display device

机译:垂直堆叠晶体管,包括该垂直堆叠晶体管的显示装置以及该显示装置的制造方法

摘要

A vertical stack transistor includes: a first transistor and a second transistor, located in a vertical direction, wherein the first transistor includes a first gate electrode, a first insulating layer, a first electrode, a first channel, and a second electrode, which are sequentially stacked in the vertical direction, and the second transistor includes a second gate electrode, a second insulating layer, a third electrode, a second channel, and a fourth electrode, which are sequentially stacked in the vertical direction, wherein the second gate electrode and the second electrode are the same electrode.
机译:垂直堆叠晶体管包括:在垂直方向上设置的第一晶体管和第二晶体管,其中第一晶体管包括第一栅电极,第一绝缘层,第一电极,第一沟道和第二电极,它们是所述第二晶体管包括在垂直方向上依次堆叠的第二栅电极,第二绝缘层,第三电极,第二沟道和第四电极,所述第二栅电极,第二绝缘层,第三电极,第二沟道和第四电极在垂直方向上依次堆叠。第二电极是相同的电极。

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