首页>
外国专利>
VERTICAL TRANSPORT FIELD-EFFECT TRANSISTOR INCLUDING DUAL LAYER TOP SPACER
VERTICAL TRANSPORT FIELD-EFFECT TRANSISTOR INCLUDING DUAL LAYER TOP SPACER
展开▼
机译:垂直传输场效应晶体管,包括双层顶层间隔器
展开▼
页面导航
摘要
著录项
相似文献
摘要
A vertical transport field-effect transistor includes a top source/drain region separated from an underlying gate stack by a multi-layer top spacer that includes an oxygen barrier layer beneath a top dielectric layer. Techniques for fabricating the transistor include depositing the oxygen barrier layer over the gate stack prior to depositing the top dielectric layer. The oxygen barrier layer blocks oxygen diffusion during deposition of the top dielectric layer, thereby avoiding damage to underlying interfacial and gate dielectric layers.
展开▼