Ds≤230; Dq≤280; Dc≤300; 1.2≤Dq/Ds ; 1.3≤Dc/Ds "/>
SPUTTERING-TARGET MATERIAL, SPUTTERING TARGET, SPUTTERING-TARGET ALUMINUM PLATE, AND METHOD OF MANUFACTURING THE SAME
首页>
外国专利>
SPUTTERING-TARGET MATERIAL, SPUTTERING TARGET, SPUTTERING-TARGET ALUMINUM PLATE, AND METHOD OF MANUFACTURING THE SAME
SPUTTERING-TARGET MATERIAL, SPUTTERING TARGET, SPUTTERING-TARGET ALUMINUM PLATE, AND METHOD OF MANUFACTURING THE SAME
展开▼
机译：溅射靶材，溅射靶材，溅射靶材铝板及其制造方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A sputtering-target material (2) is composed of aluminum having a purity of 99.999 mass % or higher and unavoidable impurities. When an average crystal-grain diameter at the plate surface (21) is given as Ds [μm], an average crystal-grain diameter at a depth of ¼th of the plate thickness (22) is given as Dq [μm], and an average crystal-grain diameter at a depth of ½ of the plate thickness (23) is given as Dc [μm], the formulas below are satisfied, and the average crystal-grain diameter changes continuously in a plate-thickness direction.; Ds≤230; Dq≤280; Dc≤300; 1.2≤Dq/Ds ; 1.3≤Dc/Ds 展开▼
机译：溅射靶材料（ 2 ）由纯度为99.999质量％以上且不可避免的杂质的铝构成。将板面（ 21 ）的平均结晶粒径设为D s [μm]时，深度¼板厚（ 22 ）的第表示为D q [μm]，并且在½的深度处的平均晶粒直径板厚（ 23 ）为D c [μm]，满足下式，平均晶粒直径在板厚方向连续变化。 ; <？in-line-formulae description =“在线公式” end =“线索”？> D s ≤230<？in-line-formulae description =“在线表达式” end =“ tail”？>; <？in-line-formulae description =“在线公式” end =“线索”？> D q ≤280<？in-line-formulae description =“在线表达式” end =“ tail”？>; <？in-line-formulae description =“在线公式” end =“线索”？> D c ≤300<？in-line-formulae description =“在线表达式” end =“ tail”？>; <？in-line-formulae description =“ In-line Formulae” end =“ lead”？>1.2≤ D q / D < Sub> s <？in-line-formulae description =“ In-line Formulae” end =“ tail”？>; <？in-line-formulae description =“在线公式” end =“ lead”？>1.3≤ D c / D < Sub> s <？in-line-formulae description =“ In-line Formulae” end =“ tail”？>
展开▼
