SINTERED SPUTTERING-TARGET MATERIAL OF Co-Zr-BASED ALLOY AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a target material of a Co-Zr-based alloy, which is used when a soft magnetism film of a Co-Zr-based alloy to be used for a vertical magnetic recording medium is formed, and has superior sputtering characteristics and low magnetic permeability, and to provide a manufacturing method therefor.;SOLUTION: The sintered sputtering-target material of the Co-Zr-based alloy has a composition formula expressed by Co_100-(X+Y)-Zr_X-M_Y which satisfies the conditions of 1≤X≤15 and 0≤Y≤15 in terms of an atomic ratio, wherein the element (M) in the composition formula is one or more elements selected from among Ti, Hf, V, Nb, Ta, Cr, Mo and W; and has a metallographic structure that shows a micro structure in which a phase formed of HCP-Co and an alloy phase mainly formed of Co are finely dispersed, and that shows an X-ray diffraction pattern in which the value of I_FCC(200)/I_HCP(101) that is an intensity ratio of an FCC(200) peak to HCP(101) peak is 0.25 or less.;COPYRIGHT: (C)2009,JPO&INPIT