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Method for Modifying Substrates Based on Crystal Lattice Dislocation Density
Method for Modifying Substrates Based on Crystal Lattice Dislocation Density
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机译:基于晶格位错密度的基板修饰方法
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摘要
A method includes: providing a semiconductor body having a generation plane and crystal lattice planes which intersect the generation plane at intersecting lines; generating modifications in the semiconductor body by multiphoton excitation and which are spaced apart from one another, the modifications altering a physical property of the semiconductor body so as to form subcritical cracks in the generation plane; and separating a solid-state layer from the semiconductor body by connecting the subcritical cracks in the generation plane.
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