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METHOD OF SIMULATING RESIST PATTERN, RESIST MATERIAL AND METHOD OF OPTIMIZING FORMULATION THEREOF, APPARATUS AND RECORDING MEDIUM
METHOD OF SIMULATING RESIST PATTERN, RESIST MATERIAL AND METHOD OF OPTIMIZING FORMULATION THEREOF, APPARATUS AND RECORDING MEDIUM
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机译:模拟电阻图形,电阻材料的方法及其优化配方,装置和记录介质的方法
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摘要
A method of simulating a resist pattern according to an exemplary embodiment includes a step (A) of calculating a latent image of a concentration of an active species in a resist film that has been radiated by a radioactive ray along a target pattern with respect to a radiation position of the radioactive ray, a step (B) of calculating a change rate of the concentration with respect to the radiation position at an edge of the target pattern on the basis of the latent image, a step (C) of calculating a probabilistic variation at the edge of the target pattern, and a step (D) of calculating a variation in pattern edge roughness from the change rate of the concentration and the probabilistic variation.
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