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AMPHOTERIC P-TYPE AND N-TYPE DOPING OF GROUP III-VI SEMICONDUCTORS WITH GROUP-IV ATOMS
AMPHOTERIC P-TYPE AND N-TYPE DOPING OF GROUP III-VI SEMICONDUCTORS WITH GROUP-IV ATOMS
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机译:具有IV组原子的III-VI组半导体的两性P型和N型掺杂
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摘要
Methods of forming a p-type IV-doped III-VI semiconductor are provided which comprise exposing a substrate to a vapor composition comprising a group III precursor comprising a group III element, a group VI precursor comprising a group VI element, and a group IV precursor comprising a group IV element, under conditions to form a p-type IV-doped III-VI semiconductor via metalorganic chemical vapor deposition (MOCVD) on the substrate. Embodiments make use of a flow ratio defined as a flow rate of the group VI precursor to a flow rate of the group III precursor wherein the flow ratio is below an inversion flow ratio value for the IV-doped III-VI semiconductor.
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