Method of manufacturing p-type gallium oxide by intrinsic doping, the thin film obtained from gallium oxide and its use

摘要

The inventive method provides for a method of p-type doping of Ga₂O₃ without adding impurity elements. Embodiments allow for significant simplification relative to extrinsic impurity element doping, and thus offers a reduced fabrication cost while being more temperature resistant since the defect dopants require higher temperatures to alter their impact. Certain methods disclosed provide for p-type gallium oxide formation via intrinsic defect doping, without requiring the addition of impurity elements which provide significant simplification relative to the existing state of the art approaches providing more temperature and radiation resistance, while offering a reduced fabrication cost.