INTEGRATION SCHEME FOR NON-VOLATILE MEMORY ON GATE-ALL-AROUND STRUCTURE

摘要

A integrated device including a non-volatile memory (NVM) and a nanosheet field effect transistor (FET) and a method of fabricating the device include patterning fins for a channel region of the NVM and the FET. The method also includes depositing an organic planarization layer (OPL) and a block mask to protect the fins for the channel region of the FET, conformally depositing a set of layers that make up an NVM structure in conjunction with the channel region of the NVM while protecting the fins for the channel region of the FET with the OPL and the block mask, and removing the OPL and the block mask protecting the fins for the channel region of the FET. Source and drain regions of the NVM and the FET are formed, and a gate of the FET is formed while protecting the NVM by depositing another OPL and another block mask.