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SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURE HAVING LOCAL INTERCONNECTS

机译:具有本地互连的自对准门端盖(SAGE)体系结构

摘要

Self-aligned gate endcap (SAGE) architectures having local interconnects, and methods of fabricating SAGE architectures having local interconnects, are described. In an example, an integrated circuit structure includes a first gate structure over a first semiconductor fin, and a second gate structure over a second semiconductor fin. A gate endcap isolation structure is between the first and second semiconductor fins and laterally between and in contact with the first and second gate structures. A gate plug is over the gate endcap isolation structure and laterally between and in contact with the first and second gate structures. A local gate interconnect is between the gate plug and the gate endcap isolation structure, the local gate interconnect in contact with the first and second gate structures.
机译:描述了具有局部互连的自对准栅极端盖(SAGE)架构,以及制造具有局部互连的SAGE架构的方法。在示例中,集成电路结构包括在第一半导体鳍上方的第一栅极结构和在第二半导体鳍上方的第二栅极结构。栅极端盖隔离结构在第一和第二半导体鳍之间,并且横向位于第一和第二栅极结构之间并与之接触。栅极插塞在栅极端盖隔离结构上方,并且横向位于第一和第二栅极结构之间并与之接触。局部栅极互连结构在栅极插头和栅极端盖隔离结构之间,该局部栅极互连结构与第一和第二栅极结构接触。

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