APPARATUS AND PROCESS FOR ELECTRON BEAM MEDIATED PLASMA ETCH AND DEPOSITION PROCESSES

摘要

Disclosed embodiments apply electron beams to substrates for microelectronic workpieces to improve plasma etch and deposition processes. The electron beams are generated and directed to substrate surfaces using DC (direct current) biasing, RF (radio frequency) plasma sources, and/or other electron beam generation and control techniques. For certain embodiments, DC-biased RF plasma sources, such as DC superposition (DCS) or hybrid DC-RF sources, are used to provide controllable electron beams on surfaces opposite a DC-biased electrode. For certain further embodiments, the DC-biased electrode is pulsed. Further, electron beams can also be generated through electron beam extraction from external and/or non-ambipolar sources. The disclosed techniques can also be used with additional electron beam sources and/or additional etch or deposition processes.