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VERTICAL CAVITY SURFACE EMITTING LASER AND METHOD FOR MANUFACTURING VERTICAL CAVITY SURFACE EMITTING LASER
VERTICAL CAVITY SURFACE EMITTING LASER AND METHOD FOR MANUFACTURING VERTICAL CAVITY SURFACE EMITTING LASER
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机译:垂直腔面发射激光器和制造垂直腔面发射激光器的方法
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摘要
A vertical cavity surface emitting laser includes: an active layer including a quantum well structure including one or more well layers including a III-V compound semiconductor containing indium as a group III constituent element; an upper laminated region containing a carbon dopant; and a substrate for mounting a post including the active layer and the upper laminated region, in which the active layer is provided between the upper laminated region and the substrate, the quantum well structure has a carbon concentration of 2×1016 cm−3 or less, and the upper laminated region includes a pile-up layer of indium at a position away from the active layer.
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机译:垂直腔表面发射激光器包括:有源层,其包括量子阱结构,该量子阱结构包括一个或多个阱层,该阱层包括包含铟作为III族构成元素的III-V族化合物半导体。包含碳掺杂剂的上部层叠区域;以及用于安装包括有源层和上层状区域的柱的基板,其中在上层状区域和基板之间提供有源层,量子阱结构具有2×10 16 <的碳浓度。 / Sup> cm -3 Sup>以下,并且上部层叠区域在远离有源层的位置包括铟的堆积层。
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