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Structure of trench-vertical double diffused MOS transistor and method of forming the same
Structure of trench-vertical double diffused MOS transistor and method of forming the same
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机译:沟槽-垂直双扩散MOS晶体管的结构及其形成方法
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摘要
A structure of trench VDMOS transistor comprises an n− epi-layer/ n+ substrate having trench gates formed therein, which have a trench oxide layer conformally formed and filled with a first poly-Si layer. A plurality of MOS structure formed on the mesas. Doubled diffused source regions are formed asides the MOS structure. An inter-metal dielectric layer is formed on the resulted surfaces. An interconnecting metal layer patterned as two is formed on inter-metal dielectric layer. The one is for source regions and the first poly-Si layer connection by source contact plugs and the other for the gate connection by gate contact plugs. In the other embodiment, the trenches are filled with a stack layer of a first oxide layer/a first poly-Si layer. The MOS gates with their second poly-Si layer in a form of rows are formed on the first oxide layer and the mesas. An inter-metal dielectric layer is formed on the resulted surfaces. An interconnecting metal layer is formed on the inter-metal dielectric layer and through the source contact plugs connecting the source regions and the first poly-Si layer. The drain electrode is formed on the rear surface of the n+ substrate for both embodiments.
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机译:沟槽VDMOS晶体管的结构包括其中形成有沟槽栅极的n-外延层/ n +衬底,该沟槽栅极具有共形地形成并填充有第一多晶硅层的沟槽氧化物层。在台面上形成多个MOS结构。在MOS结构的旁边形成了双扩散的源极区。在所得表面上形成金属间电介质层。在金属间介电层上形成图案化为两个的互连金属层。一个用于源极区域和通过源极接触塞的第一多晶硅层连接,另一个用于通过栅极接触塞子的栅极连接。在另一实施例中,沟槽填充有第一氧化物层/第一多晶硅层的堆叠层。具有第二行形式的第二多晶硅层的MOS栅极形成在第一氧化物层和台面上。在所得表面上形成金属间电介质层。互连金属层形成在金属间电介质层上并通过连接源极区和第一多晶硅层的源极接触塞形成。对于两个实施例,漏电极都形成在n +衬底的后表面上。
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