首页> 外国专利> METAL-FREE FRAME DESIGN FOR SILICON BRIDGES FOR SEMICONDUCTOR PACKAGES

METAL-FREE FRAME DESIGN FOR SILICON BRIDGES FOR SEMICONDUCTOR PACKAGES

机译:半导体封装的硅桥无金属框架设计

摘要

Metal-free frame designs for silicon bridges for semiconductor packages and the resulting silicon bridges and semiconductor packages are described. In an example, a semiconductor structure includes a substrate having an insulating layer disposed thereon, the substrate having a perimeter. A metallization structure is disposed on the insulating layer, the metallization structure including conductive routing disposed in a dielectric material stack. A first metal guard ring is disposed in the dielectric material stack and surrounds the conductive routing. A second metal guard ring is disposed in the dielectric material stack and surrounds the first metal guard ring. A metal-free region of the dielectric material stack surrounds the second metal guard ring. The metal-free region is disposed adjacent to the second metal guard ring and adjacent to the perimeter of the substrate.
机译:描述了用于半导体封装的硅桥的无金属框架设计以及所得的硅桥和半导体封装。在示例中,半导体结构包括其上布置有绝缘层的衬底,该衬底具有周边。金属化结构设置在绝缘层上,该金属化结构包括设置在介电材料叠层中的导电布线。第一金属保护环设置在介电材料堆叠中并且围绕导电路径。第二金属保护环设置在介电材料堆叠中并且围绕第一金属保护环。介电材料堆叠的无金属区域围绕第二金属保护环。不含金属的区域与第二金属保护环相邻并与基板的周边相邻。

著录项

  • 公开/公告号US2020013734A1

    专利类型

  • 公开/公告日2020-01-09

    原文格式PDF

  • 申请/专利权人 INTEL CORPORATION;

    申请/专利号US201916576520

  • 发明设计人 DAE-WOO KIM;SUJIT SHARAN;SAIRAM AGRAHARAM;

    申请日2019-09-19

  • 分类号H01L23/58;H01L23/498;H01L23/544;H01L21/66;H01L23;G01R31/27;H01L23/522;

  • 国家 US

  • 入库时间 2022-08-21 11:18:42

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