首页>
外国专利>
METHOD FOR DIRECT PATTERNED GROWTH OF ATOMIC LAYER TRANSITION METAL DICHALCOGENIDES
METHOD FOR DIRECT PATTERNED GROWTH OF ATOMIC LAYER TRANSITION METAL DICHALCOGENIDES
展开▼
机译:原子层跃迁金属二硫化物的直接图案生长方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method for direct growth of a patterned transition metal dichalcogenide monolayer, the method including the steps of providing a substrate covered by a mask, the mask having a pattern defined by one or more shaped voids; thermally depositing a salt on the substrate through the one or more shaped voids such that a deposited salt is provided on the substrate in the pattern of the mask; and thermally co-depositing a transition metal oxide and a chalcogen onto the deposited salt to form the patterned transition metal dichalcogenide monolayer having the pattern of the mask. Also provided is a patterned transition metal dichalcogenide monolayer prepared according to the method.
展开▼