nonvolatile memory cell, two-dimensional and three-dimensional arrangements of memory cells, and method of writing data to and reading data from a nonvolatile memory cell.

摘要

a nonvolatile memory cell comprising: a storage layer composed of a ferromagnetic or ferroelectric material in which data is recordable as a magnetic or electrical polarization direction; a piezomagnetic layer composed of an antiperovskite piezomagnetic material that selectively has a first type of effect on the storage layer and a second type of effect on the storage layer dependent on the magnetic state and stress on the piezomagnetic layer; and an effort inducing layer for inducing an effort in the piezomagnetic layer to thereby switch from the first effect type to the second effect type.