Method for producing patterns in a Sisubx/subN layer by electron-beam lithography method

摘要

The purpose of the notification is the production of SixN models by electron lithography,intended for use in nano - and micro -electronic component technology,optoelectronic,micromechanical,chemical sensors or biosensors. The way is,that the submicrometer or nanometer layer of SixN (2) is illuminated by an electron beam with an accelerating voltage not greater than 7 kV,the electron beam current value no less than 0,5 nA and the electric charge dose from 250 mC /cm2 to 1 000 000 mC /cm2,where the electron beam is carried over the surface of the SixN (2) layer in the area of the design,then digests the layer of SixN (2),and digestion is interrupted by the use of deionised water.