WIDE BAND GAP SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE

摘要

Provided is technology where sufficient latch-up resistance can be achieved and integration is possible. This wide band gap semiconductor device comprises: a collector region (10); a charge accumulation region (21) that has an impurity concentration higher than that of a drift region; a base region (30); a charge extraction region (32) that has an impurity concentration higher than that of the base region; an emitter region (40); a Schottky electrode (71); a gate insulating film (50); a gate electrode (60); an emitter electrode (80); and a collector electrode (81).