MULTI-LAYERED RESISTIVE-THERMOCOUPLE TYPE TEMPERATURE MEASURING WAFER SENSOR AND METHOD FOR MANUFACTURING SAME

摘要

A wafer sensor according to the present invention is configured to comprise, as a resistive temperature sensor, a plurality of reference resistors for measuring a reference temperature, and, as a thermocouple type temperature sensor, one or more thermoelectric parts connected in series from one end of the reference resistor, wherein the thermoelectric part and a connection wire are displaced in different layers. In particular, the thermoelectric part is configured in a shape in which two types of wires for forming a thermocouple are alternately repeated approximately 100 to 1,000 times. The respective thermoelectric parts are formed in a layer which is different from the layer in which the connection wire is formed so that the respective thermoelectric parts may be uniformly mounted on the entire surface area of the wafer sensor without any interference from the wire. More specifically, calibration corresponding to the reference temperature and a Seebeck coefficient of the thermoelectric unit is carried out by using the plurality of reference resistors so that reliability of the measured temperature may be improved and measuring may become more convenient since electromotive force measured through the respective thermoelectric parts is physically amplified. To this end, temperature uniformity regarding the entire surface area of a wafer can be more conveniently or accurately recognized.