首页>
外国专利>
ATOMIC LAYER DEPOSITION AND VAPOR DEPOSITION REACTOR WITH IN-CHAMBER MICROPLASMA SOURCE
ATOMIC LAYER DEPOSITION AND VAPOR DEPOSITION REACTOR WITH IN-CHAMBER MICROPLASMA SOURCE
展开▼
机译:带有腔内微等离子体源的原子层沉积和气相沉积反应器
展开▼
页面导航
摘要
著录项
相似文献
摘要
An in-chamber plasma source in a deposition reactor system includes an array of microcavity or microchannel plasma devices having a first electrode and a second electrode isolated from plasma in microcavities or microchannels. An inlet provides connection to deposition precursor. A region interacts deposition precursor with plasma. An outlet directs precursor dissociated with the plasma onto a substrate for deposition. A reactor system includes a substrate holder across from the outlet, a chamber enclosing the in-chamber plasma source and the substrate holder, an exhaust from the chamber, and conduit supplying precursors from sources or bubblers to the inlet. A reactor system can conduct plasma enhanced atomic layer deposition at high pressures and is capable of forming a complete layer in a single cycle.
展开▼