SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR, AND ELECTRONIC DEVICE COMPRISING SAID SEMICONDUCTOR DEVICE

摘要

Disclosed are a semiconductor device and a manufacturing method therefor, and an electronic device comprising the semiconductor device. The semiconductor device comprises: a substrate; and a first device and a second device formed on the substrate, the first device and the second device each comprising: a first source/drain layer, a channel layer, and a second source/drain layer sequentially stacked on the substrate from bottom to top, and a gate stack formed around at least a part of the periphery of the channel layer; at least a part of the respective sidewalls of the channel layers of the first device and the second device extends along different crystal planes or crystal plane families.