NANOCRYSTALLINE HIGH-K LOW-LEAKAGE THIN FILMS

摘要

Provided is the dielectric response of atomic layer-deposited and annealed polymorphic BaTiO₃ and BaTiO₃-Al₂O₃ bi-layer thin films based on nanocry stalline BaTiO₃ containing the perovskite and hexagonal polymorphs. Also provided are BaTiO₃ films having tuned Curie temperatures. Further provided are capacitive components, comprising: a plurality of films, the plurality of films comprising: a first grained film component, the first grained film component comprising at least one of SrTiO₃, BaTiO₃, and (Ba, Sr)TiO₃, and the first grained film component being characterized as being at least partially polymorphic crystalline in nature; a second film component contacting the first grained film component, the second film component optionally comprising AI₂O₃, and the first grained film component optionally defining an average grain size of less than about 10 micrometers.