CRYSTAL LINE GROWING STATE DETECTION METHOD, APPARATUS AND DEVICE FOR SILICON ROD

摘要

Provided are a crystal line growing state detection method, apparatus and device for a silicon rod, relating to the technical field of monocrystalline silicon. The method comprises: when a silicon rod is in an equal-diameter growing process, acquiring a sample image of the silicon rod; setting a detection region on the sample image, wherein the detection region overlaps a crystal line growing line of the silicon rod; generating a gray value curve of the detection region; and determining, on the crystal line growing line, a growing state of a crystal line of the silicon rod according to the gray value curve of the detection region. In the present invention, the growing state of the crystal line of the silicon rod can be determined by collecting the sample image of the silicon rod in the growing process in real time and setting the detection region on the sample image and according to the gray value curve of the detection region, thereby determining whether the silicon rod is a monocrystalline silicon rod. By means of the method, the fluctuation of the diameter of a silicon rod and the influence of non-obvious crystal line features on the detection process of a crystal line are reduced, thereby improving the detection precision and the detection efficiency of the crystal line, and the method is easy to operate.