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A VERTICAL SILICON CARBIDE POWER MOSFET AND IGBT AND A METHOD OF MANUFACTURING THE SAME
A VERTICAL SILICON CARBIDE POWER MOSFET AND IGBT AND A METHOD OF MANUFACTURING THE SAME
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机译:垂直碳化硅功率MOSFET和IGBT及其制造方法
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摘要
Disclosed is a vertical silicon carbide power MOSFET with a 4H-SiC substrate of n+- type as drain and a 4H-Si C epilayer of n--type, epitaxially grown on the 4H-SiC substrate acting as drift region and a source region of p++-type, a well region of p-type, a channel region of p- type and a contact region of n++-type implanted into the drift region and a metal gate insulated from the source and drift region by a gate-oxide. A high mobility layer with a vertical thickness in a range 0.1 nm to 50 nm exemplarily in the range of 0.5 nm to 10 nm is provided at the interface between the 4H-SiC epilayer and the gate-oxide.
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机译:公开了一种垂直碳化硅功率MOSFET,其具有n +型的4H-SiC衬底作为漏极和n型的4H-Si C外延层,其外延生长在4H-SiC衬底上作为漂移区和源极区。 p ++型,p型的阱区,p型的沟道区和n ++型的接触区被注入到漂移区中,并且金属栅通过栅极氧化物与源极和漂移区绝缘。在4H-SiC外延层与栅极氧化物之间的界面处设置具有垂直厚度在0.1nm至50nm范围内,例如在0.5nm至10nm范围内的高迁移率层。
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