METHOD FOR MANUFACTURING A DETECTION STRUCTURE WITH AN OPTIMISED ABSORPTION RATE, AND SAID STRUCTURE

摘要

The invention concerns a method for forming a detection structure (10) for detecting electromagnetic radiation comprising an MOS transistor (100) as a transducer. The method is based on the use of lateral extension elements (134, 135, 136) as a doping mask for the semiconductor layer (113P) of the transistor and an etching mask for the same semiconductor layer 113P), in order to provide contact portions (111A, 112A) of a drain and a source of the transistor (100). The invention further concerns a detection structure (10) capable of being obtained by such a method.