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METHOD FOR MANUFACTURING A DETECTION STRUCTURE WITH AN OPTIMISED ABSORPTION RATE, AND SAID STRUCTURE
METHOD FOR MANUFACTURING A DETECTION STRUCTURE WITH AN OPTIMISED ABSORPTION RATE, AND SAID STRUCTURE
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机译:制造具有优化吸收率的检测结构和所述结构的方法
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摘要
A method for forming a detection structure for detecting electromagnetic radiation includes an MOS transistor as a transducer. The method is based on the use of lateral extension elements as a doping mask for the semiconductor layer of the transistor and an etching mask for the same semiconductor layer, in order to provide contact portions of a drain and a source of the transistor.
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