A deep ultraviolet light-emitting diode is provided. A deep ultraviolet light-emitting diode according to an embodiment comprises: a substrate; an n-type semiconductor layer positioned on the substrate; a mesa disposed on the n-type semiconductor layer and comprising an active layer and a p-type semiconductor layer; n ohmic contact layers coming into contact with the n-type semiconductor layer; a p ohmic contact layer coming into contact with the p-type semiconductor layer; an n bump electrically connected to the n ohmic contact layers; and a p bump electrically connected to the p ohmic contact layer. The mesa comprises a plurality of vias which expose a first conductive semiconductor layer. The mesa has a long rectangular shape along the length direction. The vias are aligned to be parallel to one another in a direction perpendicular to the length direction of the mesa. The n ohmic contact layers are respectively formed on the first conductive semiconductor layer exposed around the mesa and the first conductive semiconductor layer exposed by means of the vias.
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