HAFNIUM-OXIDE-BASED FERROELECTRIC GATE FIELD EFFECT TRANSISTOR AND PREPARATION METHOD THEREFOR

摘要

A hafnium-oxide-based ferroelectric gate field effect transistor, comprising: a substrate; an isolation region provided around the substrate; a gate structure comprising a buffer layer, a floating gate electrode, a hafnium-oxide-based ferroelectric thin film layer, a control gate electrode, and a thin film electrode layer that are sequentially laminated from bottom to top on the middle portion of an upper surface of the substrate; a side wall provided outside the gate structure; a source region and a drain region provided opposite one another on two sides of the gate structure and formed by means of the inner side of the isolation region extending toward the middle portion of the substrate; a first metal silicide layer formed by means of the inner side of the isolation region extending toward the side wall; and a second metal silicide layer provided on an upper surface of the gate structure, wherein the lower surface of the second metal silicide layer is closely attached to the gate structure. The material of the floating gate electrode and the control gate electrode is HfN_x, where 0 x ≤1.1. According to the invention, a floating gate electrode is introduced, so that the working characteristic of a device can be improved; and using the HfN_x (0 x ≤ 1.1) with excellent thermal stability to make the floating gate electrode and a control gate electrode can relieve the phenomena of interface reaction and element diffusion in a device preparation process, thereby improving the electrical reliability of the device.