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MEMORY STACKS HAVING SILICON OXYNITRIDE GATE-TO-GATE DIELECTRIC LAYERS AND METHODS FOR FORMING THE SAME
MEMORY STACKS HAVING SILICON OXYNITRIDE GATE-TO-GATE DIELECTRIC LAYERS AND METHODS FOR FORMING THE SAME
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机译:具有硅氧化物栅极到栅极介电层的存储堆栈及其形成方法
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摘要
Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a memory stack, and a NAND memory string. The memory stack includes a plurality of interleaved gate conductive layers and gate-to-gate dielectric layers above the substrate. Each of the gate-to-gate dielectric layers includes a silicon oxynitride layer. The NAND memory string extends vertically through the interleaved gate conductive layers and gate-to-gate dielectric layers of the memory stack.
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