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MONOLITHIC POST COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR INTEGRATION OF THERMOELECTRIC-BASED INFRARED DETECTOR
MONOLITHIC POST COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR INTEGRATION OF THERMOELECTRIC-BASED INFRARED DETECTOR
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机译:基于热电的红外探测器的单相后互补金属氧化物-半电子集成
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摘要
A complementary metal oxide semiconductor (CMOS) device embedded with micro-electro-mechanical system (MEMS) components in a MEMS region is disclosed. The MEMS components, for example, are infrared (IR) thermosensors. The MEMS sensors are integrated on the CMOS device monolithically after CMOS processing. For example, the MEMS sensors are formed over a BEOL dielectric of a CMOS device. The device is encapsulated with a CMOS compatible IR transparent cap to hermetically seal the MEMS sensors in the MEMS region.
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