AN ELECTROLYTE-GATED FIELD-EFFECT TRANSISTOR WITH SURFACTANT LAYER

摘要

The present invention relates to an electrolyte-gated field-effect transistor (EGFET) which comprises a layer of anionic or cationic surfactant disposed between the organic semiconductor layer and the dielectric layer (electrolyte aqueous solution) which improves the stability of said EGFET, and its method for obtaining by different deposition techniques, and its uses in different diagnostic, biochemical sensor devices. The present invention relates to field-effect transistors, and biosensors devices.