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Surface protective adhesive tape for backside grinding of semiconductor wafers and grinding method of semiconductor wafers

机译:用于半导体晶片的背面研磨的表面保护胶带和半导体晶片的研磨方法

摘要

A surface protective adhesive tape for back surface grinding of a semiconductor wafer formed by forming an adhesive layer on one surface side of the substrate, wherein the surface roughness of the surface on which the adhesive layer of the substrate is not formed is Rz = 0.7 to 5.0 μm, The total light transmittance at a wavelength of 500 to 600 nm of the surface protective adhesive tape for backside grinding of the semiconductor wafer is 40 to 80%, and the color difference (ΔEM) of the mirror wafer and the surface protective adhesive tape for backside grinding of the semiconductor wafer. The surface protective adhesive tape for back-grinding of a semiconductor wafer bonded to the surface of a semiconductor wafer having a notch with a difference of the color difference ΔET between the Miller wafer and the surface of the semiconductor wafer having a notch and a semiconductor using the same Wafer grinding method.
机译:通过在基板的一个表面侧上形成粘合剂层而形成的用于半导体晶片的背面研磨的表面保护胶带,其中未形成基板的粘合剂层的表面的表面粗糙度为Rz = 0.7至5.0μm,用于半导体晶片的背面研磨的表面保护胶粘带在500-600nm的波长下的总透光率为40-80%,镜面晶片和表面保护胶粘剂的色差(ΔEM)用于半导体晶片背面研磨的胶带。用于表面研磨的表面保护胶带,用于粘合到具有凹口的半导体晶片的表面的半导体晶片,其中米勒晶片与具有凹口的半导体晶片的表面之间的色差ΔET之差与使用相同的晶圆研磨方法。

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