Grinding method of back grinding for surface protection adhesive tape and the semiconductor wafer of semiconductor wafer

摘要

PROBLEM TO BE SOLVED: To provide a front face protection adhesive tape for rear face grinding for semiconductor wafer which improves workability by providing both visibility in sticking and heat resistance without generating a sensor recognition problem even if applied to a semiconductor wafer that thin film grinding is required in a rear face grinding step for a silicon wafer or the like, and a grinding method of the semiconductor wafer.;SOLUTION: The front face protection adhesive tape for rear face grinding for the semiconductor wafer is formed by providing a base material 1 and an adhesive layer 2 on one side of the base material. Surface roughness on the side of the base material where the adhesive layer is not formed is Rz=0.7 to 5.0 μm. Full light transmittance in a wavelength 500 to 600 nm of the front face protection adhesive tape for rear face grinding for the semiconductor wafer is 40 to 80%. A difference between a color difference (ΔEM) of a mirror wafer and a color difference (ΔET) in the state where the front face protection adhesive tape for rear face grinding for the semiconductor wafer is stuck to the mirror wafer is ΔET-ΔEM6.5.;COPYRIGHT: (C)2016,JPO&INPIT