The present invention provides a GaN LED for improving photon extraction efficiency by controlling air void fraction, which comprises: a patterned sapphire substrate patterned in a lens array shape; first and second GaN conductive layers sequentially stacked on the patterned sapphire substrate; and a nano-rod in which a first dielectric hollow nanosphere layer having a space portion patterned in a specific shape on the first and second GaN conductive layers, a second dielectric hollow nanosphere layer with a smaller diameter than that of the first dielectric hollow nanosphere layer, and a dielectric nanoparticle layer with a smaller diameter than that of the first dielectric hollow nanosphere layer are stacked in order and an air layer is filled between the hollow nanospheres and the nanoparticles. Therefore, a refractive index at each horizontal layer is configured to be gradually changed to more improve photon extraction efficiency.;COPYRIGHT KIPO 2020
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