IMPROVED LIGHT EXTRACTION EFFICIENCY OF GaN BASED LEDs

摘要

An optoelectronic device has a semiconductor structure (10) on a substrate (12). The shape of the device in plan is that of a quadrilateral having two acute included angles ( alpha 1, alpha 2) and two obtuse included angles ( alpha 1, alpha 2). One of the electrode-pad units (31) is located distally from the vertices of the quadrilateral. The device may have a transparent electrode (32).