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IMPROVED LIGHT EXTRACTION EFFICIENCY OF GaN BASED LEDs
IMPROVED LIGHT EXTRACTION EFFICIENCY OF GaN BASED LEDs
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机译:GaN基LED的提高的光提取效率
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摘要
An optoelectronic device has a semiconductor structure (10) on a substrate (12). The shape of the device in plan is that of a quadrilateral having two acute included angles (α1, α2) and two obtuse included angles (α1, α2). One of the electrode-pad units (31) is located distally from the vertices of the quadrilateral. The device may have a transparent electrode (32).
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